PART |
Description |
Maker |
KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2 From old datasheet system 1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronics
|
H55S1G32MFP-60 H55S1G32MFP-75 H55S1G32MFP-A3 H55S1 |
1Gb (32Mx32bit) Mobile SDRAM
|
Hynix Semiconductor
|
EBD52UC8AARA-7A EBD52UC8AARA-7B EBD25EC8AJFA EBD25 |
512MB DDR SDRAM SO DIMM 256MB Unbuffered DDR SDRAM DIMM 1GB Unbuffered DDR SDRAM DIMM 512MB Registered DDR SDRAM DIMM 256MB DDR SDRAM SO DIMM 512MB Unbuffered DDR SDRAM DIMM 1GB DDR SDRAM SO DIMM 1GB Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
http:// ELPIDA MEMORY INC
|
W948D2FBJX5E W948D2FBJX5I W948D2FBJX6E W948D2FBJX6 |
256Mb Mobile LPDDR
|
Winbond
|
H5MS2562JFR-E3M H5MS2562JFR-J3M H5MS2562JFR-K3M H5 |
256Mb (16Mx16bit) Mobile DDR SDRAM
|
Hynix Semiconductor
|
MT48H16M16LFB5-8G MT48H8M32LFB5-8G MT48H16M16LFB5- |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
|
Micron Technology
|
WV3EG265M72EFSU262D4S WV3EG265M72EFSU265D4SG |
1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA 1GB 2x64Mx72 DDR内存,无缓冲,锁相环,FBGA封装
|
Square D by Schneider Electric Diodes, Inc.
|
W3EG72125S335AJD3 W3EG72125S202JD3 W3EG72125S263AJ |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Amphenol, Corp. Toshiba, Corp.
|
WV3EG128M72EFSR335D3SG |
1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL, FBGA 1GB 128Mx72 DDR SDRAM的注册瓦锁相环,FBGA封装
|
Electronic Theatre Controls, Inc.
|
WV3EG216M64STSU335D4NG |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|